Memory Devices and Method of Fabricating Same

ABSTRACT

A device comprises a control gate structure over a substrate, a memory gate structure over the substrate, wherein the memory gate structure comprises a memory gate electrode and a memory gate spacer, and wherein the memory gate electrode is an L-shaped structure, a charge storage layer formed between the control gate structure and the memory gate structure, a first spacer along a sidewall of the memory gate structure, a second spacer over a top surface of the memory gate structure, a first drain/source region formed in the substrate and adjacent to the memory gate structure and a second drain/source region formed in the substrate and adjacent to the control gate structure.

This application is a divisional of U.S. patent application Ser. No.14/039,925, entitled “Memory Devices and Method of Fabricating Same,”filed on Sep. 27, 2013, which application is incorporated herein byreference.

BACKGROUND

Modern electronic devices such as a notebook computer comprise a varietyof memories to store information. Memory circuits include two majorcategories. One is volatile memories; the other is non-volatilememories. Volatile memories include random access memory (RAM), whichcan be further divided into two sub-categories, static random accessmemory (SRAM) and dynamic random access memory (DRAM). Both SRAM andDRAM are volatile because they will lose the information they store whenthey are not powered. On the other hand, non-volatile memories can keepdata stored on them. Non-volatile memories include a variety ofsub-categories, such as read-only-memory (ROM), electrically erasableprogrammable read-only memory (EEPROM) and flash memory.

One type of EEPROM memory device is referred to as a flash memorydevice. Flash memories have become increasingly popular in recent years.A typical flash memory comprises a memory array having a large number ofmemory cells arranged in rows and columns. Each of the memory cells isfabricated as a field-effect transistor having a drain region, a sourceregion, a control gate and a floating gate.

The floating gate is disposed above a substrate. The floating gate isbetween the source region and the drain region, but separated from themby an oxide layer. The floating gate may be formed of suitable materialssuch as polycrystalline silicon (“poly”) and/or some other conductivematerials. The oxide layer may be formed of silicon dioxide (SiO₂)and/or the like. The control gate may be disposed over the floatinggate. The control gate and the floating gate may be separated by a thinoxide layer.

In operation, a floating gate is capable of holding a charge and isseparated from source and drain regions contained in a substrate by anoxide layer. Each of the memory cells may be electrically charged byinjecting electrons from the substrate through the oxide layer. Thecharge may be removed from the floating gate by tunneling the electronsto the source region or an erase gate during an erase operation. Thedata in flash memory cells are thus determined by the presence orabsence of electrical charges in the floating gates.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present disclosure, and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings, in which:

FIG. 1 illustrates a cross sectional view of a memory structure inaccordance with various embodiments of the present disclosure;

FIG. 2 illustrates a cross sectional view of a semiconductor devicehaving a control gate formed over a substrate in accordance with variousembodiments of the present disclosure;

FIG. 3 illustrates a cross sectional view of a semiconductor deviceshown in FIG. 2 after an O—Si—O structure is formed over the gatestructure shown in FIG. 2 in accordance with various embodiments of thepresent disclosure;

FIG. 4 illustrates a cross sectional view of the semiconductor deviceshown in FIG. 3 after a memory gate electrode layer is deposited overthe substrate in accordance with various embodiments of the presentdisclosure;

FIG. 5 illustrates a cross sectional view of the semiconductor deviceshown in FIG. 4 after a memory gate spacer layer is deposited over thesemiconductor device in accordance with various embodiments of thepresent disclosure;

FIG. 6 illustrates a cross sectional view of the semiconductor deviceshown in FIG. 5 after an etching process is applied to the semiconductordevice in accordance with various embodiments of the present disclosure;

FIG. 7 illustrates a cross sectional view of the semiconductor deviceshown in FIG. 6 after a plurality of spacers are formed over theirrespective memory gate structures in accordance with various embodimentsof the present disclosure;

FIG. 8 illustrates a cross sectional view of the semiconductor deviceshown in FIG. 7 after a patterning process is applied to a photoresistlayer in accordance with various embodiments of the present disclosure;

FIG. 9A illustrates a cross sectional view of the semiconductor deviceshown in FIG. 8 after an etching process is applied to the semiconductordevice in accordance with various embodiments of the present disclosure;

FIG. 9B illustrates a simplified diagram of the chamber of the isotropicdry etch process in accordance with various embodiments of the presentdisclosure;

FIG. 10 illustrates a cross sectional view of the semiconductor deviceshown in FIG. 9A after a photoresist removal process is applied to theremaining photoresist layer in accordance with various embodiments ofthe present disclosure;

FIG. 11 illustrates a cross sectional view of the semiconductor deviceshown in FIG. 10 after an etching process is applied to the second oxidelayer in accordance with various embodiments of the present disclosure;

FIG. 12 illustrates a cross sectional view of the semiconductor deviceshown in FIG. 11 after an etching process is applied to thesemiconductor device in accordance with various embodiments of thepresent disclosure;

FIG. 13 illustrates a cross section view of the semiconductor deviceshown in FIG. 12 after a spacer deposition is applied to thesemiconductor device in accordance with various embodiments of thepresent disclosure;

FIG. 14 illustrates a cross section view of the semiconductor deviceshown in FIG. 13 after an ion implantation process is applied to thesemiconductor device in accordance with various embodiments of thepresent disclosure;

FIG. 15 illustrates a cross sectional view of the semiconductor deviceshown in FIG. 14 after a contact etch stop layer (CESL) is formed on thesemiconductor device in accordance with various embodiments of thepresent disclosure;

FIG. 16 illustrates a cross section view of the semiconductor deviceshown in FIG. 15 after a chemical mechanical polish (CMP) process isapplied to the top surface of the semiconductor device in accordancewith various embodiments of the present disclosure;

FIG. 17 illustrates a cross section view of the semiconductor deviceshown in FIG. 16 after a variety of contacts are formed in thesemiconductor device in accordance with various embodiments of thepresent disclosure;

FIG. 18 illustrates a top view of a memory structure in accordance withvarious embodiments of the present disclosure; and

FIG. 19 illustrates a portion of the top view shown in FIG. 18 and acorresponding cross sectional view of the memory structure in accordancewith various embodiments of the present disclosure.

Corresponding numerals and symbols in the different figures generallyrefer to corresponding parts unless otherwise indicated. The figures aredrawn to clearly illustrate the relevant aspects of the variousembodiments and are not necessarily drawn to scale.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The making and using of the present embodiments are discussed in detailbelow. It should be appreciated, however, that the present disclosureprovides many applicable inventive concepts that can be embodied in awide variety of specific contexts. The specific embodiments discussedare merely illustrative of specific ways to make and use the disclosure,and do not limit the scope of the disclosure.

The present disclosure will be described with respect to embodiments ina specific context, namely a flash memory device. The embodiments of thedisclosure may also be applied, however, to a variety of memory devices.Hereinafter, various embodiments will be explained in detail withreference to the accompanying drawings.

FIG. 1 illustrates a cross sectional view of a memory structure inaccordance with various embodiments of the present disclosure. In someembodiments, the memory structure 100 may be a flash memory cell havinga first drain/source region 104 and a second drain/source region 106.

The memory structure 100 comprises a gate structure comprising a controlgate 114 and a memory gate 112. Both the control gate 114 and the memorygate 112 are formed over a substrate 102. As shown in FIG. 1, the memorygate 112 is an L-shaped structure.

The memory structure 100 further comprises a charge storage layer 116.As shown in FIG. 1, the charge storage layer 116 is an L-shaped layer. Ahorizontal side of the L-shaped layer is formed between the substrate102 and a horizontal side of the memory gate 112. A vertical side of theL-shaped layer is formed between a vertical side of the memory gate 112and the control gate 114.

It should be noted that, as shown in FIG. 1, the charge storage layer116 is enclosed by dielectric materials. As a result, the charge storagelayer 116 is isolated from the memory gate 112, the control gate 114 andthe substrate 102 respectively.

As shown in FIG. 1, the top surface of the memory gate 112 is protectedby a dielectric layer such as a silicon nitride layer 117 and/or thelike. Such a dielectric layer helps to prevent a salicide layer frombeing formed on top of the memory gate 112. FIG. 1 also illustratesthere may be two spacers formed along the sidewall of the memory gate112. More particularly, a first spacer 119 is formed along the verticalside of the memory gate 112. One terminal of the first spacer layer 119is in direct contact with the horizontal side of the memory gate 112. Asecond spacer 118 is formed along the sidewall of the first spacer layer119 as well as the sidewall of the horizontal side of the memory gate112. In some embodiments, the spacer layer 118 helps to protect thememory gate 112 during a silicon dot removal process. The silicon dotremoval process will be described below with respect to FIG. 12.

The memory structure 100 may comprise a variety of semiconductorregions. For the purpose of clearly illustrating the inventive aspectsof the various embodiments, only a few regions are described in detailherein. The rest of the semiconductor regions of the memory structure100 will be described below with respect to FIGS. 2-17.

FIGS. 2-17 illustrate intermediate steps of fabricating the memorystructure shown in FIG. 1 in accordance with various embodiments of thepresent disclosure. FIG. 2 illustrates a cross sectional view of asemiconductor device having a control gate formed over a substrate inaccordance with various embodiments of the present disclosure. As shownin FIG. 2, a plurality of gate structures 201 and 203 may be formed overthe substrate 102. It should be noted while FIG. 2 illustrates two gatestructures, the semiconductor device 200 may accommodate any number ofgate structures.

The substrate 102 may be formed of silicon, although it may also beformed of other group III, group IV, and/or group V elements, such assilicon, germanium, gallium, arsenic, and combinations thereof. Thesubstrate 102 may also be in the form of bulk substrate orsilicon-on-insulator (SOI) substrate.

In forming the gate structures 201 and 203 shown in FIG. 2, a gatedielectric layer 202 is deposited over the substrate 102 and a gateelectrode layer such as a poly layer 204 is formed over the gatedielectric layer 202. A hard mask structure including an oxide layer 206and a nitride layer 208 is formed over the poly layer 204. To form thegate structures 201 and 203 shown in FIG. 2, a photoresist layer (notshown) may be formed over the hard mask structure and a patterningprocess is applied to the photoresist layer. After an etching process,the gate structures 201 and 203 are formed as shown in FIG. 2.

The gate dielectrics layer 202 may be a dielectric material, such assilicon oxide, silicon oxynitride, silicon nitride, an oxide, anitrogen-containing oxide, a combination thereof, or the like. The gatedielectrics layer 202 may have a relative permittivity value greaterthan about 4. Other examples of such materials include aluminum oxide,lanthanum oxide, hafnium oxide, zirconium oxide, hafnium oxynitride, orcombinations thereof.

In some embodiments, the gate electrode layer 204 may be formed ofpoly-silicon. The gate electrode layer 204 may be formed by depositingdoped or undoped poly-silicon by low-pressure chemical vapor deposition(LPCVD) to a thickness in the range of about 400 Å to about 2,400 Å,such as about 1,400 Å.

In alternative embodiments, the gate electrode layer 204 may comprise aconductive material, such as a metal (e.g., tantalum, titanium,molybdenum, tungsten, platinum, aluminum, hafnium, ruthenium), a metalsilicide (e.g., titanium silicide, cobalt silicide, nickel silicide,tantalum silicide), a metal nitride (e.g., titanium nitride, tantalumnitride), doped poly-crystalline silicon, other conductive materials,combinations thereof, or the like.

FIG. 3 illustrates a cross sectional view of a semiconductor deviceshown in FIG. 2 after an oxide-silicon-oxide (O—Si—O) structure isformed over the gate structure shown in FIG. 2 in accordance withvarious embodiments of the present disclosure. The O—Si—O structureincludes a first oxide layer 302, a silicon dot layer 304 and a secondoxide layer 306. As shown in FIG. 3, the first oxide layer 302 isdeposited over the top surface of the substrate 102, the sidewalls ofthe gate structures and the top surfaces of the gate structures. In someembodiments, the first oxide layer 302 is of a thickness of about 50 Å.

The silicon dot layer 304 is formed over the first oxide layer 302. Insome embodiments, the silicon dot layer 304 is of a thickness of about100 Å. The silicon dot layer 304 may be formed by using suitabledeposition techniques such as LPCVD, plasma enhanced chemical vapordeposition (PECVD) and/or the like. The semiconductor device 200 may beplaced into a low pressure furnace (not shown). The reactive gases ofthe deposition process may include SiH4 and/or the like. The reactivegases may be mixed with a carrier gas such as N2, Ar and/or the like.

In some embodiments, the silicon dot formation process is of atemperature in a range from about 400 degrees to about 800 degrees. Theflow rate of the reactive gases is in a range from about 5 StandardLiter per Minute (SLM) to about 20 SLM. The pressure of the silicon dotformation process is in a range from about 5 Torr to about 20 Torr.

As shown in FIG. 3, the second oxide layer 306 is deposited over the topsurface of the silicon dot layer 304 through suitable semiconductordeposition techniques. In some embodiments, the second oxide layer 306is of a thickness of about 100 Å.

FIG. 4 illustrates a cross sectional view of the semiconductor deviceshown in FIG. 3 after a memory gate electrode layer is deposited overthe substrate in accordance with various embodiments of the presentdisclosure. The memory gate electrode layer 402 may be formed ofsuitable materials such as poly-silicon. The memory gate electrode layer402 is deposited over the semiconductor device 200 using suitabledeposition techniques such as chemical vapor deposition (CVD) and/or thelike. As shown in FIG. 4, the memory gate electrode layer 402 mayconform to the underlying topographic features such as the shape of thesilicon dot layer 304. In other words, the memory gate electrode layer402 is a conformal layer deposited on the semiconductor device 200.

FIG. 5 illustrates a cross sectional view of the semiconductor deviceshown in FIG. 4 after a memory gate spacer layer is deposited over thesemiconductor device in accordance with various embodiments of thepresent disclosure. In some embodiments, the memory gate spacer layer502 is formed of suitable materials such as silicon nitride and/or thelike. The memory gate spacer layer 502 may be deposited over the memorygate electrode layer 402 through suitable semiconductor depositiontechniques.

It should be noted that the thickness of the memory gate spacer layer502 may determine the critical dimensions such as the width of thememory gate 112 (not shown but illustrate in FIG. 1). In particular, thethickness of the sidewall portion 504 of the memory gate spacer layer502 may determine the shape of the memory gate 112. The detailedfabrication process and the resulting shape of the memory gate structurewill be described below with respect to FIG. 6.

FIG. 6 illustrates a cross sectional view of the semiconductor deviceshown in FIG. 5 after an etching process is applied to the semiconductordevice in accordance with various embodiments of the present disclosure.An etching process is applied to the semiconductor device 200. Bycontrolling the strength and direction of the etching process, portionsof the memory gate electrode layer 402 and the memory gate spacer layer502 have been removed as a result. As shown in FIG. 6, the etchingprocess stops on the top surface of the second oxide layer 306.

As shown in FIG. 6, after the etching process finishes, there may bethree resulting memory gate structures, namely a first memory gatestructure 602, a second memory gate structure 604 and a third memorygate structure 606. As shown in FIG. 6, the first memory gate structure602 and the second memory gate structure 604 are formed along sidewallsof the first control gate structure 201 and the second control gatestructure 203 respectively. The third memory gate structure 606 isformed between the first control gate structure 201 and the secondcontrol gate structure 203.

It should be noted that the etching process described above is aself-aligned memory gate etching process because the critical dimensionsof the resulting memory gate structures are determined by the shape ofthe memory gate spacer layer 502. As shown in FIG. 6, the portion ofmemory gate electrode layer 402 underneath the horizontal side of thememory gate spacer layer 502 has been removed. As a result, theremaining portion of the memory gate electrode layer is an L-shapedstructure. In some embodiments, the width of the horizontal side of theL-shaped structure is determined by the thickness of the sidewallportion of the memory gate spacer layer 502.

FIG. 7 illustrates a cross sectional view of the semiconductor deviceshown in FIG. 6 after a plurality of spacers are formed over theirrespective memory gate structures in accordance with various embodimentsof the present disclosure. A spacer layer (not shown) may be formed byblanket depositing one or more spacer layers (not shown) over thesemiconductor device 200. The spacer layer may comprise SiN, oxynitride,SiC, SiON, oxide, and the like and may be formed by commonly usedmethods such as CVD, PECVD, sputter, and other methods known in the art.The spacer layer may be patterned, such as by isotropically oranisotropically etching, thereby removing the spacer layer from thehorizontal surfaces of the structure and forming the spacers 702 and 704as illustrated in FIG. 7.

FIG. 8 illustrates a cross sectional view of the semiconductor deviceshown in FIG. 7 after a patterning process is applied to a photoresistlayer in accordance with various embodiments of the present disclosure.The opening of a drain/source region of the semiconductor device 200 maybe formed by using photolithography techniques to deposit and pattern aphotoresist layer 802. A portion of the photoresist layer 802 is exposedaccording to the location and shape of the drain/source region. Theremoval of a portion of the photoresist layer 802 involves lithographyoperations, which are well known, and hence are not discussed in furtherdetail herein.

FIG. 9A illustrates a cross sectional view of the semiconductor deviceshown in FIG. 8 after an etching process is applied to the semiconductordevice in accordance with various embodiments of the present disclosure.A suitable etching process such as an isotropic dry-etch process (a.k.a.CDE) may be applied to the exposed drain/source region of thesemiconductor device 200. By controlling the strength and direction ofthe etching process, the third memory gate structure 606 (now shown butillustrated in FIG. 6) has been removed. The etching process stops onthe top surface of the second oxide layer 306.

FIG. 9B illustrates a simplified diagram of the chamber of the isotropicdry-etch process in accordance with various embodiments of the presentdisclosure. The semiconductor device 200 may be placed on anelectrostatic chuck (ESC) inside the chamber 902. In order to preventthe plasma source of the etching process from damaging the semiconductordevice 200, the plasma source is placed outside the chamber 902 as shownin FIG. 9B. The reactive gas of the dry etching process is fed into thechamber 902 through a tube 904.

In some embodiments, the active species of the dry etching process aregenerated in a location away from the chamber 902 and transported intothe chamber 902 through the tube 904. The etching process is implementedas a down-flow etching process. Such a down-flow etching process helpsto improve the uniformity of the surface of the semiconductor device200. The ESC shown in FIG. 9B is capable of adjusting the temperature ofthe semiconductor device 200 so that the semiconductor device 200 is ofa stable temperature during the etching process. Moreover, an automaticpressure controller (APC) is employed to maintain a stable pressurelevel in the chamber 902.

The reactive gases of the dry etching process include a mixture of afirst gas and a second gas. The first gas may be any CxHyFz type etchinggases such as CF4, CH2F2, CHF3, any combination thereof and/or the like.The second gas may be oxygen. In some embodiments, the ratio of thefirst gas to the second gas is in a range from about 0.5 to about 1.5.The etching process pressure is in a range from about 200 mT to about800 mT. The flow rate of the reactive gases is in a range from about 300Standard Cubic Centimeters per Minute (SCCM) to about 800 SCCM. Theetching selectivity of silicon/oxide is maintained in a range from about5 to about 10. Likewise, the etching selectivity of nitride/oxide ismaintained in a range from about 5 to about 10.

FIG. 10 illustrates a cross sectional view of the semiconductor deviceshown in FIG. 9A after a photoresist removal process is applied to theremaining photoresist layer in accordance with various embodiments ofthe present disclosure. The remaining photoresist layer shown in FIG. 9Amay be removed by using suitable photoresist stripping techniques suchas chemical solvent cleaning, plasma ashing, dry stripping and/or thelike. The photoresist stripping techniques are well known and hence arenot discussed in further detail herein to avoid repetition.

FIG. 11 illustrates a cross sectional view of the semiconductor deviceshown in FIG. 10 after an etching process is applied to the second oxidelayer in accordance with various embodiments of the present disclosure.An etching process such as a wet etching process is applied to thesecond oxide layer 306 (not shown but illustrated in FIG. 10). As shownin FIG. 11, a majority of the second oxide layer 306 has been removed asa result. The remaining portion of the second oxide layer 306 includestwo L-shaped structures 1102 and 1104 situated between the memory gates(e.g., the memory gate electrode layer 402) and their respective controlgates (e.g., the control gate 114).

FIG. 12 illustrates a cross sectional view of the semiconductor deviceshown in FIG. 11 after an etching process is applied to thesemiconductor device in accordance with various embodiments of thepresent disclosure. A suitable etching process such as an isotropic dryetch process is applied to the exposed portions of the silicon dot layer304 and the memory gate electrode layer 402. As a result, a majority ofthe silicon dot layer 304 has been removed to form the charge storagelayer 116. In addition, an upper portion of the vertical side of thememory gate electrode layer 402 has been removed. The spacer 702prevents the horizontal side of the memory gate electrode layer 402 frombeing recessed. The isotropic dry etch process has been described abovewith respect to FIG. 9A and FIG. 9B, and hence is not discussed again toavoid unnecessary repetition.

As shown in FIG. 12, the remaining silicon dot layer 304 may include anL-shaped layer. The L-shaped layer may function as a charge storagelayer for the semiconductor device 200. The remaining memory gateelectrode layer 402 is an L-shaped structure, which is the memory gate112 shown in FIG. 1. The upper portion of the memory gate 112 has beenrecessed. In the subsequent fabrication steps, a protective layer suchas a resist protective oxide (RPO), a nitride layer may be deposited ontop of the memory gate 112. Such a protective layer helps to preventsalicide formation on top of the memory gate 112.

FIG. 13 illustrates a cross section view of the semiconductor deviceshown in FIG. 12 after a spacer deposition is applied to thesemiconductor device in accordance with various embodiments of thepresent disclosure. A spacer layer (not shown) may be formed by blanketdepositing one or more spacer layers (not shown) over the semiconductordevice 200. The spacer layer 1301 may comprise SiN, RPO and/or the likeand may be formed by commonly used methods such as CVD, PECVD, sputter,and other methods known in the art. It should be noted that the topsurface of the memory gate 112 is covered by a spacer layer as shown inFIG. 13. Such a spacer layer helps to prevent a salicide layer frombeing formed over the memory gate 112.

FIG. 14 illustrates a cross section view of the semiconductor deviceshown in FIG. 13 after an ion implantation process is applied to thesemiconductor device in accordance with various embodiments of thepresent disclosure. The spacer layer 1301 may be patterned, such as byisotropically or anisotropically etching, thereby removing the spacerlayer over the drain/source regions.

The drain/source regions 104 and 106 may be formed through an ionimplantation process. As is known to those of skill in the art, the useof dopant atoms in an implant step may form the drain/source regions 104and 106 with a particular conductivity type. Depending on differentapplications, the drain/source regions 104 and 106 may be n-type orp-type. In some embodiments, the drain/source regions 104 and 106 may bea p-type region. Appropriate p-type dopants such as boron, gallium,indium and/or the like are implanted into the substrate 102 to form thedrain/source regions 104 and 106. Alternatively, the drain/sourceregions 104 and 106 may be an n-type region. Appropriate n-type dopantssuch as phosphorous, arsenic and/or the like are implanted into thesubstrate 102 to form the drain/source regions 104 and 106.

FIG. 14 further illustrates a cross sectional view of the semiconductordevice shown in FIG. 13 after silicide regions are formed over thedrain/source regions 104 and 106. The silicide regions 1402, 1404 and1406 are formed by a salicide process. In a salicide process, a thinlayer of metal is blanket deposited over a semiconductor wafer havingexposed drain/source regions. The wafer is then subjected to one or moreannealing steps. This annealing process causes the metal to selectivelyreact with the exposed silicon of the source/drain regions, therebyforming metal silicide regions 1402, 1404 and 1406 over the drain/sourceregions. The process is referred to as a self-aligned silicidationprocess because the silicide layer is formed only where the metalmaterial directly contacts the silicon drain/source regions and the gateelectrodes.

In some embodiments, silicide regions 1402, 1404 and 1406 comprisemetals that react with silicon such as titanium, platinum, cobalt andthe like. However, other metals, such as manganese, palladium and thelike, can also be used.

FIG. 15 illustrates a cross sectional view of the semiconductor deviceshown in FIG. 14 after a contact etch stop layer (CESL) is formed on thesemiconductor device in accordance with various embodiments of thepresent disclosure. The CESL 1502 may comprise commonly used dielectricmaterials, such as silicon nitride, silicon oxynitride, siliconoxycarbide, silicon carbide, combinations thereof, and multi-layersthereof. The CESL 1502 is deposited over the semiconductor devicethrough suitable deposition techniques such as sputtering, CVD and thelike.

An inter-layer dielectric (ILD) layer 1504 may be formed over the CESL1502. The ILD layer 1504 may be formed by chemical vapor deposition,sputtering, or any other methods known and used in the art for formingan ILD, using, e.g., tetra-ethyl-ortho-silicate (TEOS) and oxygen as aprecursor. The ILD layer 1504 may be about 4,000 Å to about 13,000 Å inthickness, but other thicknesses may be used. The ILD layer 1504 maycomprise doped or undoped silicon oxide, although other materials suchas silicon nitride doped silicate glass, high-k materials, combinationsof these, or the like, may alternatively be utilized.

FIG. 16 illustrates a cross section view of the semiconductor deviceshown in FIG. 15 after a chemical mechanical polish (CMP) process isapplied to the top surface of the semiconductor device in accordancewith various embodiments of the present disclosure. A planarizationprocess, such as CMP, etch back step and the like, may be performed toplanarize the top surface of the ILD layer 1504. As shown in FIG. 15, aportion of the ILD layer 1504 has been removed as a result.

FIG. 17 illustrates a cross section view of the semiconductor deviceshown in FIG. 16 after a variety of contacts are formed in thesemiconductor device in accordance with various embodiments of thepresent disclosure. A dielectric layer 1702 may be formed over the ILDlayer 1504. A plurality of openings (not shown) may be formed by etchingthe dielectric layer 1702 as well as the ILD layer 1504. With the helpof the CESL layer 1502, the etching process of the dielectric layer 1702and the ILD layer 1504 is more precisely controlled. The CESL layer1502, the ILD layer 1504 and the dielectric layer 1702 in the openingsare also removed, thereby exposing the underlying silicide regions overthe drain/source regions 104 and 106.

A metallic material, which includes tungsten, titanium, aluminum,copper, any combinations thereof and/or the like, is filled into theopenings, forming contact plugs 1704 and 1706.

FIG. 18 illustrates a top view of a memory structure in accordance withvarious embodiments of the present disclosure. The memory structure 1802includes a plurality of memory cells arranged in rows and columns. Asshown in FIG. 18, a memory gate structure 1804 and the control gatestructure 1806 are placed in parallel.

The control gate structure 1806 has its own contacts 1808 as shown inFIG. 18. The formation of the contacts of the memory gate structure 1804includes forming an opening adjacent to the memory gate structure 1804,filling a conductive material or a variety of conductive materials intothe opening to form a conductive region (not shown), wherein theconductive region is electrically coupled to the memory gate structure1804 and forming a plurality of contact plugs over the conductiveregion.

FIG. 19 illustrates a portion of the top view shown in FIG. 18 and acorresponding cross sectional view of the memory structure in accordancewith various embodiments of the present disclosure. The top view 1900 isa portion of the top view shown in FIG. 18. The top view 1900illustrates a first memory gate 1912, a first control gate 1914, asecond memory gate 1918 and a second control gate 1916. As shown in FIG.19, the control gates and the memory gates are placed in parallel. Thetop view 1900 further illustrates three contacts 1902, 1904 and 1906,which are connected to drain/source regions of a memory structure.

The cross sectional view 1910 is taken along line A-A′. The detailedstructures and fabrication steps of the memory structure shown in thecross sectional view 1910 have been described above, and hence are notdiscussed herein to avoid repetition.

In accordance with an embodiment, a method comprises forming a controlgate structure over a substrate, depositing a charge storage layer overthe control gate structure, depositing a memory gate layer over thecharge storage layer, wherein the memory gate layer conforms to thecharge storage layer, depositing a first dielectric layer over thememory gate layer and applying a first etching process to the firstdielectric layer and the memory gate layer to form a first memory gatestructure, wherein the first memory gate structure is formed along asidewall of the control gate structure and a remaining portion of thememory gate layer is an L-shaped structure.

The method further comprises forming a first spacer along a sidewall ofthe first memory gate structure, applying a second etching process tothe charge storage layer form an L-shaped charge storage layer, whereinthe L-shaped charge storage layer is located between the first memorygate structure and the control gate structure, recessing an upperportion of the memory gate structure and forming a second spacer overthe memory gate structure.

In accordance with an embodiment, a method comprises forming a controlgate structure over a substrate, forming an Oxide-Silicon-Oxide layerover the control gate structure, depositing a memory gate layer over theOxide-Silicon-Oxide layer, wherein the memory gate layer is a conformalfilm, depositing a memory gate spacer layer over the memory gate layerand forming a first memory gate structure through a first etchingprocess, wherein the first memory gate structure is formed along asidewall of the control gate structure.

The method further comprises forming a first spacer along a sidewall ofthe first memory gate structure, applying a second etching process to atop oxide layer of the Oxide-Silicon-Oxide layer, applying a thirdetching process to a silicon dot layer of the Oxide-Silicon-Oxide layerand the memory gate layer of the first memory gate structure, forming asecond spacer over the memory gate structure and forming a firstdrain/source region adjacent to the memory gate structure and a seconddrain/source region adjacent to the control gate structure.

In accordance with an embodiment, an apparatus comprises a control gatestructure over a substrate, a memory gate structure over the substrate,wherein the memory gate structure comprises a memory gate electrode anda memory gate spacer, and wherein the memory gate electrode is anL-shaped structure, a charge storage layer formed between the controlgate structure and the memory gate structure, a first spacer along asidewall of the memory gate structure, a second spacer over a topsurface of the memory gate structure, a first drain/source region formedin the substrate and adjacent to the memory gate structure and a seconddrain/source region formed in the substrate and adjacent to the controlgate structure.

Although embodiments of the present disclosure and its advantages havebeen described in detail, it should be understood that various changes,substitutions and alterations can be made herein without departing fromthe spirit and scope of the disclosure as defined by the appendedclaims.

Moreover, the scope of the present application is not intended to belimited to the particular embodiments of the process, machine,manufacture, composition of matter, means, methods and steps describedin the specification. As one of ordinary skill in the art will readilyappreciate from the present disclosure, processes, machines,manufacture, compositions of matter, means, methods, or steps, presentlyexisting or later to be developed, that perform substantially the samefunction or achieve substantially the same result as the correspondingembodiments described herein may be utilized according to the presentdisclosure. Accordingly, the appended claims are intended to includewithin their scope such processes, machines, manufacture, compositionsof matter, means, methods, or steps.

What is claimed is:
 1. An apparatus comprising: a control gate structureover a substrate; a memory gate structure over the substrate, wherein:the memory gate structure comprises a memory gate electrode and a memorygate spacer, and wherein the memory gate electrode is an L-shapedstructure; a charge storage layer formed between the control gatestructure and the memory gate structure; a first spacer along a sidewallof the memory gate structure; a second spacer over a top surface of thememory gate structure; a first drain/source region formed in thesubstrate and adjacent to the memory gate structure; and a seconddrain/source region formed in the substrate and adjacent to the controlgate structure.
 2. The apparatus of claim 1, wherein: the charge storagelayer is an L-shaped layer.
 3. The apparatus of claim 2, wherein: ahorizontal side of the L-shaped layer is formed between the memory gatestructure and the substrate; and a vertical side of the L-shaped layeris formed between the memory gate structure and the control gatestructure.
 4. The apparatus of claim 1, wherein: the charge storagelayer is a silicon dot layer.
 5. The apparatus of claim 1, furthercomprising: an oxide layer formed between the charge storage layer andthe memory gate structure.
 6. The apparatus of claim 1, wherein: thememory gate spacer is formed of silicon nitride; the first spacer isformed of silicon nitride; and the second spacer is formed of siliconnitride.
 7. A device comprising: a control gate structure over asubstrate, wherein the control gate structure and the substrate areseparated by a control gate dielectric layer; an L-shaped charge storagelayer having a vertical side extending along a sidewall of the controlgate structure; an L-shaped memory gate structure over the substrate; afirst spacer extending along a sidewall of the L-shaped memory gatestructure; and a second spacer over a top surface of the L-shaped memorygate structure.
 8. The device of claim 7, further comprising: anL-shaped dielectric layer between the L-shaped memory gate structure andthe L-shaped charge storage layer.
 9. The device of claim 7, wherein:the L-shaped charge storage layer is a silicon dot layer.
 10. The deviceof claim 7, further comprising: a first drain/source region formed inthe substrate and adjacent to the L-shaped memory gate structure; and asecond drain/source region formed in the substrate and adjacent to thecontrol gate structure.
 11. The device of claim 7, wherein: the secondspacer is a resist protective oxide layer.
 12. The device of claim 7,wherein: the first spacer is a silicon nitride layer.
 13. The device ofclaim 7, further comprising: a thin spacer layer, wherein the firstspacer is between the thin spacer layer and the L-shaped memory gatestructure.
 14. The device of claim 13, wherein: the first spacer isbetween an upper portion of the thin spacer layer and a vertical portionof the L-shaped memory gate structure.
 15. The device of claim 14,wherein: a lower portion of the thin spacer layer is in direct contactwith a horizontal portion of the L-shaped memory gate structure.
 16. Anapparatus comprising: a control gate structure over a substrate; anL-shaped charge storage layer having a vertical portion extending alonga sidewall of the control gate structure and a horizontal portionextending along a top surface of the substrate; an L-shaped oxide layerextending along the L-shaped charge storage layer; an L-shaped memorygate electrode layer extending along the L-shaped oxide layer; a firstspacer extending along a sidewall of the L-shaped memory gate electrodelayer; and a second spacer over a top surface of the L-shaped memorygate electrode layer.
 17. The apparatus of claim 16, further comprising:a control gate dielectric layer, wherein the control gate structure andthe substrate are separated by the control gate dielectric layer. 18.The apparatus of claim 16, wherein: the L-shaped memory gate electrodelayer and the L-shaped charge storage layer are separated by theL-shaped oxide layer.
 19. The apparatus of claim 16, wherein: the firstspacer is formed of silicon nitride.
 20. The apparatus of claim 16,wherein: the second spacer is formed of resist protective oxide.